According to IMARC Group, titled "Ferroelectric RAM Market : Global Industry Trends, Share, Growth, Opportunity and Forecast 2022-2027," The global ferroelectric RAM market size reached a US$ 301.4 Million in 2021. Looking forward, IMARC Group expects the market to reach US$ 370.5 Million by 2027, exhibiting a CAGR of 3.6% during 2022-2027.
A ferroelectric random-access memory (RAM), or FRAM, stands for a RAM that allows faster read-and-write access of dynamic RAM. It contains a thin ferroelectric film made of lead zirconate titanate (PZT), a bit line, and a capacitor that is connected to a plate. Two of the primarily used FRAM, serial and parallel memory, are installed in consumer electronics, including personal digital assistants (PDAs), smartphones, automobile electronics, smart cards, etc. They also offer higher endurance, faster write performance, greater data reliability, more write-erase cycles, etc., compared to flash drives.
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Note: We are regularly tracking the direct effect of COVID-19 on the market, along with the indirect influence of associated industries. These observations will be integrated into the report.
The expanding information technology (IT) industry is one of the primary factors driving the market. Moreover, the growing adoption of electronic handheld devices is further escalating the product demand. Additionally, several smart meter manufacturers are also utilizing FRAM to operate battery-powered wireless sensors for prolonged operational life and lower maintenance costs. Furthermore, various technological advancements, including the integration of the Industrial Internet of Things (IIoT) and cloud computing solutions with connected devices, are also strengthening the global market. Besides this, modern FRAM is also being increasingly used for continuous, high-frequency, and reliable data logging for testing and measuring factory equipment and non-volatile data capture of industrial processes. This is anticipated to further propel the growth of the FRAM market in the coming years.
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Global Ferroelectric RAM Market 2022-2027 Analysis and Segmentation:
The competitive landscape of the market has been studied in the report with the detailed profiles of the key players operating in the market.
Fujitsu Limited (Furukawa Group), Infineon Technologies AG, International Business Machines Corporation, LAPIS Semiconductor Co. Ltd. (Rohm Semiconductor), Samsung Electronics Co. Ltd., Texas Instruments Incorporated and Toshiba Corporation.
The report has segmented the market on the basis on region, type, application and end-use.
Breakup by Type:
Breakup by Application:
Breakup by End-Use:
Breakup by Region:
North America: (United States, Canada)
Asia Pacific: (China, Japan,India, South Korea, Australia, Indonesia, Others)
Europe: (Germany, France,United Kingdom, Italy, Spain, Russia, Others)
Latin America: (Brazil, Mexico, Others)
Middle East and Africa
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Key highlights of the report:
Market Performance (2016-2021)
Market Outlook (2022- 2027)
Porter's Five Forces Analysis
Market Drivers and Success Factors
Comprehensive Mapping of the Competitive Landscape
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